China’s R&D roadmap Silicon Carbide for power electronic devices utilization

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The Chinese Smart Grid Research Institute of State Grid Corporation of China (SGCC) pays high attention on Silicon Carbide (SiC) R&D and its application for power electronic devices and switches. During the China International Conference on Electricity Distribution 2012 in Shanghai on 5-9 September, Prof. Kunshan YU, Director of the New Materials and Microelectronics department of SGCC, revealed an ambitious roadmap on SiC materials.

SiC materials have characteristics that are valuable for power quality measuring devices, switches, and transformers for electricity transmission and distribution.

  • The thermal conductivity is three times higher than silicon, materials work properly at 300 ℃.
  • SiC switches respond faster than silicon devices, thus reducing the switching losses.
  • Lower conduction resistance than equivalent silicon devices, conduction losses and the total energy consumption can be decreased by more than 30%.

Prof. Yu claims that SiC application will increase efficiency of devices from 95% to 97-99%. To realize smart grids, more measuring devices are needed. SiC application will provide an important role in efficient measurement on the net.

Source: Presentation Power Grid and SiC Technology – 2012-SEP – Smart Grid Research Institute – Prof YU Kunshan (PPTX, 6MB)

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